Reliability extrapolation of ultrathin (EOT </spl sim/1.5nm) SiON films is greatly hindered by the inability to detect the actual first breakdown. Using larger increases in gate current as the breakdown criterion leads to erroneous lifetime predictions. A semi-empirical model for progressive breakdown wear-out is constructed and corrected methodology for reliability extrapolation for ultrathin oxides is proposed.
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Kaczer et al. (2005) studied this question.
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