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This paper presents a 10 b SAR ADC with a binary-scaled error compensation technique. The prototype occupies an active area of 155 × 165 ¿m 2 in 65 nm CMOS. At 100 MS/S, the ADC achieves an SNDR of 59.0 dB and an SFDR of 75.6 dB, while consuming 1.13 mW from a 1.2 V supply. The FoM is 15.5 fJ/conversion-step.
Liu et al. (Mon,) studied this question.