We report experiments on the electrical conductivity of Al 0.3 Ga 0.7 As:Si in the critical region of the metal-insulator transition. The electron concentration is finely controlled in the vicinity of the transition using the persistent photoconductivity effect. The value of the critical exponent turns out to be 1. The metal-insulator transition due to the delocalization effect by the magnetic field is also studied.
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Katsumoto et al. (1987) studied this question.
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