Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
November 1, 1985physica status solidi (b)

Quantum Effects in Accumulation Layers of Si‐SiO2 Interfaces in the WKB Effective Mass Approximation

View Full Paper
Ask AI
Bookmark
Share

Authors

ECErcole De CastroInstituto Politécnico NacionalPOP. OlivoUniversity of Ferrara

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Castro et al. (1985) studied this question.

synapsesocial.com/papers/6a1febdf7110a651dc04b448https://doi.org/10.1002/pssb.2221320116
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Parametric Approach to Surface Screening of a Weak External Electric Field1971 · 34 citations
  2. 2Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit1967 · 1,936 citations
  3. 3Self-Consistent Results for<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Si Inversion Layers1972 · 1,175 citations
  4. 4Fowler-Nordheim electron tunneling in thin Si-SiO2-Al structures1981 · 70 citations
  5. 5Tunneling through Thin Films with Traps1962 · 72 citations