Density of band-gap traps in polycrystalline films from photoconductivity transients using an improved Laplace transform method

Slow relaxation of the photoconductivity over a period of days was studied in polycrystalline ZnO and TiO2 films prepared by spray pyrolysis. The phenomenon is described by a model involving deep sensitizing hole traps in the forbidden gap. The trap state distribution based on this model was calculated using an improved Laplace transform method. For ZnO and TiO2 films, the density of states was shown to have a peak-like distribution with a maximum near the lower third of the energy gap.