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A method has been proposed for the determination of localized-state distributions in amorphous semiconductors from transient photoconductivity using Laplace transforms [H. Naito, J. Ding, and M. Okuda, Appl. Phys. Lett. 64, 1830 (1994)]. The method is applicable to both pre- and postrecombination regimes of transient photoconductivity, and to amorphous semiconductors exhibiting either nondispersive or dispersive transport. To simplify the analysis of the method, a new approach with the same advantages of the method is presented.
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Naito et al. (1995) studied this question.
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