WO x formed by plasmas oxidation shows promising multi-bit/cell resistance memory characteristics (ChiaHua Ho et al., 2007). The simple memory is completely self-aligned, requiring no additional masks and has a small 6F 2 cell size. In this work we introduce a graded oxide device that is highly reliable (250degC baking for > 2,000 hrs). The conduction mechanism and factors affecting the memory reliability are examined extensively.
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