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Fully functional 512Mb PRAM with 0.047μm 2 (5.8F 2 ) cell size was successfully fabricated using 90nm diode technology in which we developed novel process schemes such as vertical diode as cell switch, self-aligned bottom electrode contact scheme, and line-type Ge 2 Sb 2 Te 5 . The 512Mb PRAM showed excellent electrical properties of sufficiently large on-current and stable phase transition behavior. The reliability of the 512Mb chip was also evaluated as a write-endurance over 1E5 cycles and a data retention time over 10 years at 85°C.
Oh et al. (Fri,) studied this question.