The growth of the layered chalcogenide GaSe on cleaved GaAs(110) surfaces was investigated with photoemission and low-energy electron diffraction (LEED). GaSe films grow with their c axis perpendicular to the GaAs(110) surface. LEED patterns after initial film growth are a superposition of rectangular GaAs:Se spots and two hexagonal domains rotated by ±5° with respect to the GaAs 〈001〉 axis. At higher film thickness a hexagonal LEED pattern with GaSe 〈120〉 ‖ GaAs 〈001〉 is obtained.
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Rudolph et al. (2000) studied this question.
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