Growth of carbon nanotubes as horizontal interconnects

In this study, we evaluate the possibility of achieving horizontal carbon nanotube (CNT) growth for application as global interconnects in VLSI integrated circuits. A test structure suitable for electrical characterization has been designed and fabricated to assess horizontal CNT growth. Catalyst placement on the vertical electrode surface was realized by either physical vapour deposition or electroless deposition of Ni. The resulting yield of nanotubes grown by a chemical vapour deposition method is found to be low and randomly oriented, most likely due to low density of the catalyst particles deposited on the HGTS. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)