Randomized trial demonstrates electrical manipulation of hole spins in semiconductor quantum dots, indicating new designs for qubit devices.
Key Points
This research aims to explore the electrical manipulation of hole spins in semiconductor structures under nonseparable electric fields. It assesses the impact of inhomogeneities on spin dynamics.
Examined Ge quantum dots within a Ge/GeSi quantum well.
Analyzed the spin-orbit coupling effects due to inhomogeneous electric fields.
Investigated Rabi oscillations influenced by patterned electric fields.
Identified additional spin-orbit coupling mechanisms from electric field inhomogeneities.
Showed that the nonseparability effect can match the magnitude of Rashba interactions.
Demonstrated successful spin manipulation even in symmetric, disk-shaped quantum dots.