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December 13, 1982Physical Review Letters

Tractable Approach for Calculating Lattice Distortions around Simple Defects in Semiconductors: Application to the Single Donor Ge in GaP

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MSMatthias SchefflerUniversity of GenevaJVJean Pol VigneronUniversity of NamurGBGiovanni B. BacheletEnrico Fermi Center for Study and Research

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Scheffler et al. (1982) studied this question.

synapsesocial.com/papers/6a2022fc24b5f30be5fbed19https://doi.org/10.1103/physrevlett.49.1765
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