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As the world enters the Artificial Intelligence (AI) era NAND FLASH faces new market opportunities and scaling challenges. We present Microns G9 TLC NAND technology featuring class leading bandwidth enabled by 6 plane architecture and low latency. We describe block architecture innovation that enabled ~40% increase in array density to ~35 Gb/mm2 with only 19% increase in # of WLs. Beyond G9 we discuss potential scaling options including confined storage node, ferroelectric cell and wafer bonding to enable continued bit cost reduction and satisfy future AI workload demands.
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Krishnan et al. (2025) studied this question.
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