P-Type ZnSe:N Prepared by Electron Cyclotron Resonance Radical Beam Doping during Molecular Beam Epitaxial Growth

ZnSe doped with nitrogen(N) has been prepared by molecular beam epitaxy using N 2 * , N * nitrogen radicals, N 2 + ions and N atoms from an electron cyclotron resonance nitrogen plasma source. N-doped ZnSe/GaAs heteroepitaxial layers showed p-type conduction with net acceptor concentrations as high as 1.8×10 18 cm -3 , and the activation rate of N atoms was 60%. Photoluminescence spectra measured at 7 K from p-type ZnSe:N layers with net acceptor concentrations higher than 10 18 cm -3 were dominated by two different donor-acceptor pair emission bands with zero phonon energies of 2.684 eV and 2.697 eV.