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March 1, 1983Japanese Journal of Applied Physics

Electrical and Photo-luminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy: Substrate Temperature Effect

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Authors

TYTakafumi YaoNational Institute of Advanced Industrial Science and TechnologyMOMutsuo OguraTokyo Institute of TechnologySMSeiichi MatsuokaGC Corporation (Japan)

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Yao et al. (1983) studied this question.

synapsesocial.com/papers/6a202e0b6ed993cb49fc0049https://doi.org/10.1143/jjap.22.l144
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Also Consider

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  1. 1Shallow acceptors and p-type ZnSe1979 · 79 citations
  2. 2Photoluminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy1981 · 43 citations
  3. 3Optical Properties of Substitutional Donors in ZnSe1972 · 300 citations
  4. 4Molecular beam epitaxial growth of low-resistivity ZnSe films1979 · 71 citations
  5. 5Pair Spectra and "Edge Emission" in Zinc Selenide1969 · 201 citations