Neuromorphic Properties of Forming-Free Non-Filamentary TiN/Ta2O5/Ta Structures with an Asymmetric Current–Voltage Characteristic

In this work, we demonstrate the possibility of resistance controlling in forming-free non-filamentary self-rectifyng TiN/Ta2O5/Ta stacks due to different switching voltages and the duration of the quasi-static sweep step. In pulsed measurements, the structures demonstrate the dependence of the current response on the switching signals frequency and gradual volatile resistive switching necessary for reservoir computing paradigm realization.