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The problem of electron tunneling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The k^3 Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunneling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers.
Perel et al. (Mon,) studied this question.