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The design and implementations of optoelectronic millimeter-wave circuits integrated in silicon technologies are presented in this paper. For demonstrating the feasibility and the performance of the utilized technologies, a low-noise amplifier (LNA) with optical input and an optically synchronized voltage-controlled oscillator (VCO) have been implemented. The chips are fabricated using 0.25 μm SiGe:C BiCMOS electronicphotonic integrated circuit (EPIC) technology with f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> =190 GHz. Operated from a 3.3-V supply voltage, the LNA feature a wide bandwidth of around 50 GHz while consuming 80 mW power. The VCO features a free-running tuning range from 58.5 GHz to 65.7 GHz and has a phase noise of -85 dBc/Hz at 1-MHz offset at 58.5 GHz. It is shown that the oscillator performance can be increased considerably by injecting an optical signal to stabilize the oscillator.
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Yodprasit et al. (2022) studied this question.