Poly(4‐trimethylsilylphthalaldehyde) sensitized with triphenylsulfonium triflate develops to the substrate upon postbake. The sensitivity is very high owing to chemical amplification. The resist system does not self‐develop during exposure but the development is achieved simply by heating the image‐wise exposed resist. The thermally developed resist image serves as an oxygen RIE barrier for the pattern transfer in the bilayer resist scheme, providing a new positive‐tone all dry process.
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Itô et al. (1989) studied this question.
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