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May 1, 1987Japanese Journal of Applied Physics

Reflection High-Energy Electron Diffraction Intensity Oscillations during GexSi1-x MBE Growth on Si(001) Substrates

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Authors

KSK. SAKAMOTOHokuriku UniversityTSTsunenori SakamotoElectrotechnical InstituteSNSatoru NagaoHitachi (Japan)

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SAKAMOTO et al. (1987) studied this question.

synapsesocial.com/papers/6a2076235e1fb797adf5ff34https://doi.org/10.1143/jjap.26.666
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