COPPER IODIDE THIN FILMS AS A p-TYPE ELECTRICAL CONDUCTIVITY IN DYE-SENSITIZED p-CuI|Dye|n-TiO₂ HETEROJUNCTION SOLID STATE SOLAR CELLS

The transparent semiconducting copper iodide ( CuI ) films were deposited by pulsed laser deposition (PLD) and their structural and optoelectrical properties in the power output of TiO 2 | Dye | CuI cells are reported. These CuI films exhibited optical transmittance of over 80% in the wavelength range from 400 to 900 nm and a minimum resistivity of about 2 KΩ-cm. An efficient charge generation is observed through the illumination of the TiO 2 layer of the fabricated p - CuI | Dye | n - TiO 2 cells. The cells performances have been given in the current–voltage (I–V) working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm 2 , 25°C). The maximum short circuit photo current density (J sc ) of about 12.2 mA/cm 2 and open circuit photo voltage (V oc ) of about 480 mV were obtained for the TiO 2 | Dye | CuI cells with good reproducibility. The fill factor ( FF ) and power conversion efficiency (η) were about 47.8% and 2.8%, respectively.