The characteristics and reliability of NO-nitrided gate oxide devices were investigated in detail. Light and heavy nitridations were accomplished using rapid thermal annealing (RTA) of SiO/sub 2/ in an NO ambient by varying either annealing temperature or annealing time. The effects of nitridation condition on the charge trapping, interface state generation, low- and high-field mobility, radiation hardness as well as hot-carrier reliability were discussed. We also studied channel hot-carrier effects on the irradiated devices. Results indicate that NO-nitrided devices show a significantly reduced transconductance degradation compared to control devices.
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Sun et al. (2002) studied this question.
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