Gate oxynitride was grown in NO for the first time. This approach can provide a tight N accumulation near the Si/SiO/sub 2/ interface. Much lower thermal budget is required for an NO process than for an N/sub 2/O process to produce an oxynitride with useful properties. Submicron MOSFET's with NO oxynitride showed superior current drive characteristics and comparable hot carrier immunity to those with N/sub 2/O oxynitride.>
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Okada et al. (1994) studied this question.
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