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January 22, 2003

High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance

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Authors

YWYifeng WuDKD. KapolnekJIJ. P. Ibbetson

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Wu et al. (2003) studied this question.

synapsesocial.com/papers/6a209fee2ad198cbe7f36fe4https://doi.org/10.1109/iedm.1999.824300
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Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates1999 · 539 citations
  2. 2High Al-content AlGaN/GaN MODFETs for ultrahigh performance1998 · 280 citations