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We report 0.2-6 GHz MMIC power amplifiers with 12 dB gain, over 23 dBm output power and more than 25% power-added-efficiency in a GaAs MESFET technology offering 18 GHz f/sub /spl tau// and 12 V breakdown. These circuits have pain-bandwidth products of /spl sim/1.3 f/sub /spl tau// and are more efficient than distributed power amplifiers. These circuit topologies are being used in GaN based broad-band high power amplifiers in development.
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Krishnamurthy et al. (2003) studied this question.
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