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A wideband Darlington amplifier topology which is well suited for maximum-bandwidth, moderate-gain, matched-impedance applications is described. A test circuit using a silicon bipolar monolithic technology with an f/sub T/ of 9 GHz has been fabricated. Measured results show a 9.3 dB insertion gain and a 3.2 GHz bandwidth for the packaged device.>
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Armijo et al. (1989) studied this question.
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