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In this work we consider the prospect of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated. We also provide a comparative assessment of typical hardness levels for other types of non-volatile memories such as flash, ferroelectric (FRAM), magnetoresistive (MRAM) memory. We have summarized the data on SEE and TID hardness levels for different types of commercially available non-volatile memories.
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Petrov et al. (2022) studied this question.
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