Radiation Hardness of TiO₂ Memristive Junctions

Semiconducting TiO2displays non-volatile multi-state, hysteretic behavior in its I-V characteristics that can be exploited as a memory material in a memristive device. We exposed memristive TiO2devices in theonandoffresistance states to 45 Mrad(Si) of ~1-MeV gamma radiation and 23 Mrad(Si) of 941-MeV Bi-ions under zero bias conditions and none of the devices were degraded. These results suggest that TiO2memristive devices are good candidates for radiation hard electronics for aerospace.