Resistive switching devices have now become important candidates for non-volatile data memories often referred to as Resistive Random Access Memories (RRAM) or Memristors. Resistive switching is a physical phenomenon where a dielectric suddenly changes its resistance under the action of strong electric field. The change in resistance is non-volatile so used in resistive random access memories which are a promising candidate for data storage applications. These devices were mainly fabricated by means of top down approach but because of the size limits, bottom up approach is used. This paper discusses and focuses on the study of resistive switching in Titanium Dioxide (TiO 2 ) thin film for use in non-volatile memories.
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Tamkeen Farooq (2019) studied this question.
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