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We present a method for synthesizing MoS(2)/Graphene hybrid heterostructures with a growth template of graphene-covered Cu foil. Compared to other recent reports, (1, 2) a much lower growth temperature of 400 °C is required for this procedure. The chemical vapor deposition of MoS(2) on the graphene surface gives rise to single crystalline hexagonal flakes with a typical lateral size ranging from several hundred nanometers to several micrometers. The precursor (ammonium thiomolybdate) together with solvent was transported to graphene surface by a carrier gas at room temperature, which was then followed by post annealing. At an elevated temperature, the precursor self-assembles to form MoS(2) flakes epitaxially on the graphene surface via thermal decomposition. With higher amount of precursor delivered onto the graphene surface, a continuous MoS(2) film on graphene can be obtained. This simple chemical vapor deposition method provides a unique approach for the synthesis of graphene heterostructures and surface functionalization of graphene. The synthesized two-dimensional MoS(2)/Graphene hybrids possess great potential toward the development of new optical and electronic devices as well as a wide variety of newly synthesizable compounds for catalysts.
Shi et al. (Tue,) studied this question.