Highly robust ultra-thin gate dielectric for giga scale technology

This paper focuses on the reliability of ultra-thin (<2.0 nm) jet-vapor deposited (JVD) silicon nitride as an advanced gate dielectric under high-field, high-current stress conditions. The data indicate high breakdown strengths, almost no stress-induced leakage current after passing over 400 C/cm/sup 2/ at high fields, and very little trap generation. Results from TDDB experiments suggest that, for a 10-year lifetime, an electric field of over 8 MV/cm at room temperature and over 6 MV/cm at 150/spl deg/C may be used.