Answers are grounded in this paper and cite their sources.
A self-aligned SiGe HBT technology achieving a cutoff frequency (f T ) of 253 GHz was developed using a selective SiGe epitaxial growth process. Germanium concentration in an i-SiGe layer just under a p + intrinsic base region was raised to 27.4% to improve f T , and boron concentration in the intrinsic base region reached 2.4 × 10 20 cm -3 as a deposition to maintain a breakdown voltage of 1.5 V. A 0.13-μm SiGe BiCMOS technology geometrically advanced from an earlier 0.18-μm version shrinks the emitter width from 0.2 to 0.12 μm to reduce collector-base capacitance and base resistance. It achieves a maximum oscillation frequency (f MAX ) of 325 GHz. This technology can be applied to optical and mm wave communication systems.
No takes yet. Share an insight, caveat, or question.
Hashimoto et al. (2014) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: