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January 1, 2026SHILAP Revista de lepidopterologíaOpen Access

Erratum to “Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies”

Skylar deBoer Seung Yup Jang Adam J. Morgan Woongje Sung

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Key Points

The main aim is to correct inaccuracies in previously published data regarding SiC MOSFET layout topologies.
Identification of errors in the original paper
Re-evaluation of experimental and simulation data
Clarification of layout topology descriptions
Corrections aim to enhance reliability of findings
Fixes improve understanding of electrical characteristics
Updated information aids future experimental designs

Implication

Erratum reports corrections to layout topologies in SiC MOSFET study, suggesting improved accuracy in findings.

Abstract

Presents corrections to the paper, (Comprehensive Experimental and Simulation Study of Six 1.2kV SiC MOSFET Layout Topologies).

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Cite This Study

deBoer et al. (2026) studied this question.

synapsesocial.com/papers/69be35166e48c4981c67335a https://doi.org/10.1109/jeds.2026.3658907

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Accurate & Complete behaviourial SPICE modelling of commercial SiC Power MOSFET OF 1200V, 75A.2024 · 3 citations
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