What question did this study set out to answer?

To correct errors in the previously published article regarding HfO2 dielectric films in 2D transistors.

April 16, 2026Open Access

Author Correction: Wafer-scale high-κ HfO2 dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS2 transistors

Key Points

To correct errors in the previously published article regarding HfO2 dielectric films in 2D transistors.
Updated figures and text in the manuscript to rectify inaccuracies.
Supplementary Information provided for comparison of original and corrected versions.
High gain measurements of 40 at 0.2 V and 205 at 1.0 V confirmed for 8-inch wafer-scale circuits.
Static power consumption reported as 22 pW at 0.2 V.

Abstract

In the version of the article initially published, there were errors in Fig. 5f, g, i and associated text.The figure has been updated and for comparison, the original figure is available as Supplementary Information accompanying this amendment.In the Fig. 5g legend, now reading " voltage gain and static power of an inverter as supply voltage from 0.2 to 1.0 V," the range originally read "0.1 to 0.5 V." In the Fig. 5k legend, the text now reading "at supply voltage of 1.0 V.The output frequency is 2.35 MHz," the two values appeared originally as "0.5 V" and "3.15 MHz."In the second paragraph of the Results "8-inch wafer-scale 2D circuits with 1.3-nm-HfO 2 " section, in the sentences now reading "It shows a high gain of 40 and 205 at V dd of 0.2 and 1.0 V, respectively.At the same time, the static power is only 22 pW at V dd of 0.2 V," "0.2 and 1.0 V" originally read "0.1 and 0.5 V" and "0.2 V" originally read "0.1 V".

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