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Microwave characteristics of spiral inductors on low-resistivity Si substrates have been improved by implanting Si/sub 28//sup +/ ions. Spiral inductors fabricated on these implanted substrates demonstrate better Q-value and microwave performance. The Q-value of inductor enhanced 60% on the implanted substrates than that of low resistivity Si substrates. An equivalent circuit model of inductor has been evaluated to discuss the effect of substrate loss.
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Chen et al. (2000) studied this question.
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