Surface bond angle and bond lengths of rearranged As and Ga atoms on GaAs(110)

We have determined the surface structure of GaAs(110) by comparing our experimental low-energy-electron-diffraction (LEED) data with curves calculated by the combined space method. We find that the best agreement between theory and experiment is obtained for a structure in which the As atoms are tilted outward and the Ga atoms are tilted inward, with an angle of rotation of 27^∘{} and a Ga to second-layer spacing of 1.452 {}. For this structure the As back bond is contracted by about 5%. These findings are compared with previous results from LEED and surface-band-structure calculations.