Subsurface atomic displacements at the GaAs(110) surface

LEED IS (intensity–momentum transfer) data has been used to verify atomic displacements in the first subsurface layer of GaAs(110). IS profiles averaged over a range of incidence (ϑ) and azimuthal (φ) angles, subject to constant S, data for selected values of ϑ and φ, and similar IS profiles computed from kinematical calculations are intercompared to assess the relative importance of inadequate data averaging and variations of geometric parameters. Preferred atomic position parameters in the terminating region of the lattice are given.