Intrinsic fluctuations in threshold voltage, subthreshold swing and drain current of ultra-small-geometry MOSFET's due to random placement of dopant atoms in the channel are examined using novel physical models and a Monte-Carlo simulator. The characteristics of these intrinsic random device parameter fluctuations are shown to be strongly influenced, even without extrinsic channel length or oxide thickness variations, by the degree of DIBL in the target MOSFET. Limitations to level of integration in sub-0.1 /spl mu/m GSI technology are projected.
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De et al. (2002) studied this question.
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