Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
November 22, 2002

Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors

View Full Paper
Ask AI
Bookmark
Share

Authors

HTHans TuinhoutNXP (Netherlands)AMA.H. MontreeKasetsart UniversityJSJurriaan SchmitzUniversity of Twente

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Tuinhout et al. (2002) studied this question.

synapsesocial.com/papers/6a20f6e96dd54ee3d3eb36eahttps://doi.org/10.1109/iedm.1997.650463
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 10.5 micron CMOS for high performance at 3.3 V2003 · 47 citations
  2. 2Matching properties of MOS transistors1989 · 3,327 citations