Solution‐Processed All‐Oxide Transparent High‐Performance Transistors Fabricated by Spray‐Combustion Synthesis

Spray-combustion processed all-oxide thin film transistors (TFTs) integrating a high-quality ZrO2 or Al2O3 gate dielectric, a high-mobility indium zinc oxide or indium gallium zinc oxide semiconductor, and indium tin oxide electrodes are reported. High-quality porosity-free, well-defined layers with uniform thickness across the transparent TFT stacks ensure good gate modulation, low operating voltages, high carrier mobilities, good on/off current ratio, and excellent reliability. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.