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The results of kinetic simulations of the aggregates formed during the deposition of atoms on a semiconductor surface are reviewed. Because the kinetic parameters are poorly known and the accuracy of the existing interatomic potentials has not been sufficiently tested, the goal has been to reach a qualitative understanding of the formation of unusual patterns during growth, such as the segregation of aluminum during the growth of aluminum-gallium-arsenide (AlGaAs) coherent tilted superlattices and the formation of thin, long, and parallel islands during the deposition of Si on an Si(100) surface. Kinetic mechanisms for these phenomena are proposed.
Metiu et al. (Fri,) studied this question.
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