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The polarity dependence observed for destructive breakdown of ultrathin silicon dioxide films is shown to be directly correlated to the oxide degradation caused by hot-electron-induced defect production. The probability of defect generation is also demonstrated to depend on the Fermi level position at the anode/oxide interface. The specific anode interface, whether substrate/oxide or gate/oxide, is shown to have no direct relationship to the degradation rate.
D. J. DiMaria (Mon,) studied this question.