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We report a first determination of the conduction-band offset in the strained-layer Al0.15Ga0.85As/In0.15Ga0.85As/GaAs pseudomorphic structure. Two-dimensional electron density and its effective mass are independently measured by Shubnikov–de Haas and cyclotron resonance experiments for a series of samples with a range of spacer thickness from 30 to 100 Å. Using a charge transfer model, the conduction-band offset at the Al0.15Ga0.85As/In0.15Ga0.85As interface is found to be (255±35) meV.
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Lin et al. (1989) studied this question.
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