Experimental spectroscopy reveals increased electron effective mass in strained AlGaAs/InGaAs/GaAs structures, indicating impacts of lattice strain and high electron density.
Electron effective mass in the InxGa1−xAs conduction channel of strained AlGaAs/InGaAs/GaAs pseudomorphic structures is measured using far-infrared cyclotron resonance techniques at 4.2 K. The measured cyclotron mass is heavier than the conduction-band-edge mass in bulk InxGa1−xAs. This result is explained by the large two-dimensional electron density realized in the structure, and the lattice strain that exists in the InxGa1−xAs layer.
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Liu et al. (1988) studied this question.
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