We measured the in-plane effective mass for electrons in multiquantum wells in InGaAs/InP by the Shubnikov–de Haas effect. We varied the well width from 8.6 down to 2.3 nm where the enhancement of the effective mass is predicted to be very pronounced. The electron concentration was in the range of 3×1011 cm−2, so that band filling can be neglected. The variation of the effective mass from 0.045 to 0.067m0 is in accordance with current theories. We discuss the effect of the interface roughness and ionized impurities on the scattering times as found from our experiments.
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Schneider et al. (1995) studied this question.
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