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Abstract Molecular engineering of 2D transition‐metal dichalcogenides (TMDs) is an effective strategy for tuning their electronic properties, enhancing metal‐semiconductor contacts, and modulating charge carrier dynamics. However, scalable molecular engineering for fabricating wafer‐scale 2D TMDs field‐effect transistors (FETs) has been scarcely reported. Here, improved electrical performance in monolayer (1L)‐MoS 2 FETs via allylamine polymer encapsulation, achieved by a plasma‐induced molecule polymerization (PIMP) process with a low power of 5 W, is reported. Electrical measurement results confirm a weak n‐doping effect in 1L‐MoS 2 , with which the doping concentrations could be adjusted from 1.12 × 10 12 to 5.17 × 10 12 cm −2 . A high‐resolution transmission electron microscopy (HRTEM) image reveals an ultra‐thin and dense allylamine polymer layer with a thickness of 3.7 nm, uniformly coated on the surface of the 1L‐MoS 2 under the PIMP process for 20 s. The conformal polymerized layer not only reduces the hysteresis loops of the 1L‐MoS 2 FETs but also enhances environmental stability while preserving the transistor characteristics for ≈9 months. Additionally, 1L‐MoS 2 FET arrays with over 5000 devices on a large scale, revealing high uniformity and reproducibility using the PIMP process, which offers a practical and scalable strategy for wafer‐scale optimization of 2D FETs, are demonstrated.
Liu et al. (Thu,) studied this question.