Answers are grounded in this paper and cite their sources.
The electronic structure of the (110) surface of GaAs is analyzed using a surface-relaxation model as determined by recent low-energy-electron diffraction studies. A self-consistent pseudopotential calculation based on this model yields no intrinsic surface states within the fundamental band gap: a result not achieved in previous pseudopotential calculations. The calculations appear to be in good accord with recent photoemission measurements and we present an analysis of the surface-state energy spectra. In addition, our studies suggest that pseudopotential calculations coupled with angle-resolved photoemission measurements can be a sensitive probe of surface structural properties.
No takes yet. Share an insight, caveat, or question.
Chelikowsky et al. (1979) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: