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The electron effective mobility in n-channel MOSFETs has been investigated under Fowler-Nordheim (F-N) tunneling current stress at room temperature. With F-N current stress, mobilities become smaller than of the prestress mobilities over the whole region of inversion carrier density N/sub inv/, and the N/sub inv/-dependence of the mobility almost disappears.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Akizawa et al. (1988) studied this question.
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