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The Ge2Sb2Te5/Ga30Sb70 multilayer films with different periods and thickness ratios were prepared by radio-frequency magnetron sputtering system. It was found that three stages with distinct different resistance were achieved during the process of heating for the multilayer films in less than 3 periods. The data retention temperatures for 10 years of [Ge2Sb2Te5/Ga30Sb70]2 multilayer films were estimated to be higher than 110°C. The results of cross-sectional transmission electron microscopy confirmed the multilayer structure with clear interfaces between Ge2Sb2Te5 and Ga30Sb70 layers. Phase change memory device based on [Ge2Sb2Te5 (30 nm)/Ga30Sb70 (20 nm)]2 verified the multi-state data storage capability of the multilayer films.
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Sun et al. (2012) studied this question.
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