Phase change memory (PCM) cells with monolayer chalcogenide film (Ge 2 Sb 2 Te 5 or Sb 2 Te 3 ) and doublelayer chalcogenide films (Ge 2 Sb 2 Te 5 and Sb 2 Te 3 ) were successfully fabricated. The PCM cell with doublelayer structure like W/Ge 2 Sb 2 Te 5 (30 nm)/Sb 2 Te 3 (60 nm)/TiN/Al shows superior performances to monolayer ones, which is mostly referred to the reduction of set voltage value and reset voltage value, and the ability of multilevel data storage. Theoretical simulations of the temperature distribution of the PCM cell with the doublelayer structure were also investigated.
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Rao et al. (2007) studied this question.
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